DMN2053UQ-13

Single FETs, MOSFETs Overview

The DMN2053UQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±12V. The device provides a continuous drain current (ID) of 6.5A at +25°C, with a maximum static drain-source on-resistance (RDS(ON)) of 29mΩ at VGS=10V and 35mΩ at VGS=4.5V. Packaged in an SOT-23 housing, it operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Low on-state resistance for high efficiency power management
• Fast switching speed with low input/output leakage
• Totally lead-free and fully RoHS compliant
• Halogen and antimony free green device

Single FETs, MOSFETs Applications

• General purpose interfacing switches
• Power management functions
• Automotive applications requiring specific change control

Single FETs, MOSFETs Procurement Notes

Verify the component datasheet revision and date code markings against official Diodes Incorporated documentation before procurement. Confirm that the ordering suffix matches the required packing quantity and carrier type. Ensure compliance with automotive quality standards if the application requires AEC-Q101 qualification and PPAP capability. Validate package material specifications and moisture sensitivity levels for your assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when a compact single N-channel MOSFET is needed for low-voltage switching applications. The SOT-23 package offers a balance between thermal performance and board space constraints. Consider the RDS(ON) variations across different gate drive voltages to ensure adequate conduction efficiency. Evaluate the total gate charge and switching times for high-frequency operation requirements.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management solutions suitable for general-purpose interfacing and automotive environments.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 20V BVDSS, SOT-23 package, and comparable RDS(ON) characteristics. Verify pinout compatibility and thermal resistance values. Check for equivalent AEC-Q101 qualification if used in automotive contexts.

Single FETs, MOSFETs FAQ

Is the DMN2053UQ-13 qualified for automotive applications?

Yes, the DMN2053UQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

What is the maximum pulsed drain current for this device?

The maximum pulsed drain current (IDM) is 22A, based on a 380μs pulse with a 1% duty cycle.