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DMN2053UQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT23 T&R 3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2053UQ-7
- Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 10V
- Rds On (Max) @ Id, Vgs：29mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.6 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：414 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMN2053UQ-7
Single FETs, MOSFETs Overview
The DMN2053UQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 6.5A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 29mΩ at VGS=10V and 35mΩ at VGS=4.5V. Total gate charge (Qg) is 4.6nC, with turn-on delay time of 2.6ns and rise time of 2.9ns. It operates within a temperature range of -55°C to +150°C and is housed in a SOT23 package.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed with low input capacitance
- Low input/output leakage characteristics
- Totally lead-free and fully RoHS compliant
Single FETs, MOSFETs Applications
- General purpose interfacing switches
- Power management functions
- Automotive applications requiring specific change control
Single FETs, MOSFETs Procurement Notes
Verify the exact part number against official manufacturer documentation before procurement. Confirm that the ordering suffix matches the required packing quantity, as different suffixes indicate distinct reel sizes. Ensure compliance with automotive qualification standards if the application requires AEC-Q101 certification and PPAP capability. Cross-reference datasheet revisions to ensure electrical parameters align with design requirements.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring a 20V N-channel MOSFET with optimized on-resistance. Consider the thermal resistance values provided for both minimum pad layout and copper plate mounting scenarios. Evaluate the gate threshold voltage and total gate charge to ensure compatibility with the driving logic levels and switching frequency requirements of the target system.
Single FETs, MOSFETs Part Context
This component belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management applications and includes variants with different packaging options to suit various manufacturing needs.
Single FETs, MOSFETs Replacement Considerations
The datasheet lists the DMN2053UQ-13 as an alternative packing option with a 10,000-unit tape and reel carrier. No other direct substitute part numbers are documented in the provided source material.
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