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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4.6A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
- Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：369pF @ 10V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMN2053UVT-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package with two independent channels. Key electrical parameters include a drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±12V. The device supports a continuous drain current of 4.6A at 25°C, reducing to 3.7A at 70°C. Static drain-source on-resistance (RDS(ON)) is specified as 35mΩ max at VGS=4.5V and ID=5.0A, and 43mΩ max at VGS=2.5V and ID=4.0A. Total gate charge (Qg) is typically 3.6nC at VGS=4.5V. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Dual channel configuration within a single compact TSOT26 package
- Optimized for low on-state resistance while maintaining fast switching performance
- Low input capacitance and leakage characteristics suitable for high-efficiency power management
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the component utilizes the TSOT26 case style and complies with RoHS directives. Ensure the specific revision of the datasheet matches the production batch requirements for your design integration.
Selection Notes
Select this component when a dual N-channel topology is required in a space-constrained application. Evaluate the thermal resistance values against your board layout copper area, as power dissipation capabilities vary significantly between standard FR-4 substrates and boards with dedicated heat sinking planes.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The 'VT' designation indicates the specific TSOT26 surface-mount package variant. The '-13' suffix denotes the standard 10,000-piece tape and reel quantity used for automated assembly processes.
Replacement Considerations
Check pinout compatibility if substituting other dual MOSFETs in the TSOT26 package. Verify that replacement devices meet or exceed the 20V BVDSS and 4.6A ID ratings. Ensure the alternative components offer comparable RDS(ON) specifications at your intended gate drive voltages.
