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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4.6A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
- Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：369pF @ 10V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMN2053UVT-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and operates with a drain-source voltage of 20V. The device provides a continuous drain current of 4.6A at +25°C, reducing to 3.7A at +70°C. Static drain-source on-resistance is specified as 35mΩ at VGS=4.5V and 43mΩ at VGS=2.5V. Total gate charge is 3.6nC. Operating and storage temperatures range from -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Features low input capacitance and fast switching speed characteristics.
- Compliant with RoHS directives and constructed using halogen-free and antimony-free green materials.
Applications
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the component authenticity against the official Diodes Incorporated datasheet DS40904 Rev. 2-2. Confirm that the ordering suffix '-7' corresponds to the standard 3000-unit tape and reel packaging configuration in the TSOT26 case. Ensure compliance requirements match specific project needs regarding lead-free and halogen-free standards.
Selection Notes
Select this component when a 20V N-channel MOSFET with low RDS(ON) is required for compact designs. The TSOT26 package suits space-constrained surface mount layouts. Evaluate thermal dissipation capabilities based on the 173°C/W junction-to-ambient resistance for steady-state operations on FR-4 substrates.
Part Context
This part belongs to the DMN2053UVT series of N-channel enhancement mode MOSFETs. It utilizes silicon technology within a TSOT26 molded plastic case. The product line targets high-efficiency power management solutions requiring low on-resistance and fast switching speeds.
Replacement Considerations
Consult the manufacturer's documentation for direct equivalents. Verify pinout compatibility and electrical parameters such as BVDSS and RDS(ON) before substituting with other N-channel MOSFETs in similar packages.
FAQ
What is the maximum continuous drain current at elevated temperatures?
The maximum continuous drain current decreases to 3.7A when the ambient temperature reaches +70°C.
How does the on-resistance vary with gate-source voltage?
RDS(ON) is 35mΩ at VGS=4.5V, 43mΩ at VGS=2.5V, and increases to 56mΩ at VGS=1.8V under specified test conditions.
What are the dynamic switching characteristics?
The device exhibits a turn-on delay time of 2.6ns, turn-on rise time of 3.0ns, turn-off delay time of 12.5ns, and turn-off fall time of 3.6ns.
