DMN2053UVTQ-7

DMN2053UVTQ-7

$0.42
  • Description:MOSFET 2N-CH 20V 4.6A TSOT26
  • Series:-

SKU:9e4bea1f544e Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 4.6A TSOT26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4.6A (Ta)
  • Rds On (Max) @ Id, Vgs:35mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:369pF @ 10V
  • Power - Max:700mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:TSOT-26
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMN2053UVTQ-7

Overview

The DMN2053UVTQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and operates with a drain-source voltage of 20V. The device provides a continuous drain current of 4.6A at 25°C, reducing to 3.7A at 70°C. Static drain-source on-resistance is specified as 35mΩ at VGS=4.5V and 43mΩ at VGS=2.5V. Total gate charge is 3.6nC, with turn-on delay time of 2.6ns and turn-off delay time of 12.5ns. Thermal resistance junction-to-ambient is 173°C/W under standard conditions.

Feature Summary

  • Dual configuration integrating two independent N-channel MOSFETs in a single compact TSOT26 package for space-constrained designs.
  • Optimized for high-efficiency power management through minimized on-state resistance while maintaining superior switching performance.
  • Qualified for automotive applications meeting AEC-Q101 standards, PPAP capability, and IATF 16949 manufacturing requirements.

Applications

  • Backlighting circuits
  • DC-DC converters
  • Power management functions

Procurement Notes

Verify the specific ordering suffix when purchasing. The -7 suffix indicates a 3,000-unit tape and reel packaging format, whereas the -13 suffix denotes a 10,000-unit tape and reel. Confirm that the required quantity aligns with these factory packaging multiples to ensure proper procurement handling and inventory management.

Selection Notes

Select this component for applications requiring dual N-channel switching within a limited footprint. Evaluate thermal constraints carefully, as the total power dissipation is rated at 0.7W without an extended copper plate. Ensure the gate drive voltage meets the minimum threshold for optimal RDS(ON) performance, particularly if operating below 4.5V.

Part Context

This part belongs to Diodes Incorporated's advanced MOSFET portfolio designed for low on-resistance and fast switching. It utilizes silicon technology housed in a molded plastic TSOT26 case with matte tin annealed terminals. The device is lead-free, fully RoHS compliant, and halogen-free, adhering to strict environmental standards for modern electronics manufacturing.

Replacement Considerations

Direct functional substitutes include the DMN2053U-13 or DMN2053UVT-7 from the same manufacturer family. Verify pinout compatibility and electrical parameters such as RDS(ON) and package dimensions before implementing any cross-brand replacements in existing circuit designs.

FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is 4.6A at an ambient temperature of +25°C and decreases to 3.7A at +70°C.

Is this component suitable for automotive use?

Yes, the DMN2053UVTQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities for automotive applications requiring specific change control.

What is the typical input capacitance?

The typical input capacitance (Ciss) is 369pF, measured at VDS = 10V, VGS = 0V, and f = 1.0MHz.

DMN2053UVTQ-7DMN2053UVTQ-7
$0.42
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