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DMN2053UWQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT323 T&R. Review the specifications below when checking this part for your BOM.
The DMN2053UWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 20V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 2.9A at 25°C, with an on-resistance of 56mΩ at VGS=4.5V. Packaged in SOT323, it includes a total gate charge of 3.6nC and turn-on delay time of 2.6ns.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required automotive quality standards, including AEC-Q101 qualification and PPAP capability, as these are critical for production integration. Ensure the selected package variant matches the PCB footprint requirements for the SOT323 form factor.
Select this component when low input capacitance and fast switching speeds are required for compact designs. The SOT323 package offers a balance between thermal dissipation and board space efficiency. Consider the 20V rating and 2.9A current limit for low-voltage signal routing or power management tasks where high-speed performance is prioritized over high-current handling capabilities.
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically to address the stringent reliability and quality requirements of the automotive industry. The device integrates standard silicon technology into a compact surface-mount package suitable for automated assembly processes.
DMN2053UWQ-7
Yes, the device is qualified to AEC-Q101 standards and is manufactured in IATF 16949 certified facilities.
The maximum pulsed drain current is 20A with a 10µs pulse duration and 1% duty cycle.
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