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DMN2053UWQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT323 T&R. Review the specifications below when checking this part for your BOM.
The DMN2053UWQ-7 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 2.9A at +25°C. The device offers low on-resistance, with RDS(ON) values of 56mΩ at VGS=4.5V, 65mΩ at VGS=2.5V, 93mΩ at VGS=1.8V, and 140mΩ at VGS=1.5V. Packaged in an SOT323 surface-mount format, it operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets all required automotive quality standards, including IATF 16949 manufacturing certification and PPAP requirements, before finalizing procurement specifications.
Select this component when a compact SOT323 package is required for 20V N-channel switching applications. Ensure the gate drive voltage aligns with the specified RDS(ON) test conditions to achieve optimal conduction losses. Verify thermal management capabilities against the junction-to-ambient resistance values provided in the datasheet.
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive reliability requirements while maintaining a small footprint suitable for dense PCB layouts.
Consult official manufacturer substitution guides for verified alternatives. Do not assume pin compatibility or electrical equivalence with other SOT323 devices without reviewing specific datasheets.
Yes, the device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
The maximum pulsed drain current (IDM) is 20A with a 10µs pulse duration and 1% duty cycle.
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