DMN2055UW-13

Single FETs, MOSFETs Overview

The DMN2055UW-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT323 surface-mount package. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 3.1A at +25°C. The device exhibits a typical on-resistance (RDS(ON)) of 46mΩ at VGS = 4.5V and 53mΩ at VGS = 2.5V. Key electrical parameters include a gate threshold voltage range of 0.4V to 1.0V, total gate charge of 4.3nC, and input capacitance of 400pF. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Designed for low on-state resistance while maintaining superior switching performance.
• Utilizes totally lead-free and fully RoHS compliant manufacturing processes.
• Constructed with halogen and antimony free green molding compound.

Single FETs, MOSFETs Applications

• General purpose interfacing switch
• Power management functions
• DC-DC converters
• Analog switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen-free status, prior to integration into the final assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when a compact SOT323 footprint is required for 20V applications. The device offers a balance of low static conduction losses and fast dynamic switching characteristics suitable for high-efficiency power management circuits. Ensure the design accommodates the thermal resistance limits specified for steady-state operation on standard FR-4 substrates.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2055 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-resistance without compromising switching speed. The DMN2055UW variant specifically utilizes the SOT323 case style, providing a small form factor solution for portable and space-constrained electronic designs requiring efficient power control.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the DMN2055UW-7, which shares identical electrical specifications but is packaged in 3,000-unit tape and reels instead of 10,000-unit reels. Verify pinout compatibility and thermal characteristics before substituting any other MOSFET models.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current capability?

The device supports a pulsed drain current of 22A with a 10μs pulse duration and a duty cycle of 1%.

Is the device qualified for automotive applications?

For automotive applications requiring AEC-Q100/101/200 qualification or PPAP capability, customers must contact Diodes Incorporated directly as these are not standard for this part number.