DMN2055UW-7

Single FETs, MOSFETs Overview

The DMN2055UW-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT323 surface-mount package. It features a drain-source voltage rating of 20V and a continuous drain current of 3.1A at +25°C. The device exhibits low on-resistance, specified as a maximum of 46mΩ at VGS=4.5V and 53mΩ at VGS=2.5V. Key electrical parameters include a gate threshold voltage range of 0.4V to 1.0V, total gate charge of 4.3nC, and input capacitance of 400pF. Thermal characteristics specify a junction-to-ambient thermal resistance of 241°C/W and a power dissipation capacity of 0.52W.

Single FETs, MOSFETs Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
• Totally lead-free and fully RoHS compliant with halogen and antimony free green device construction.

Single FETs, MOSFETs Applications

• General purpose interfacing switch
• Power management functions
• DC-DC converters
• Analog switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000 units per tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically the EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliance. Ensure the application environment remains within the specified operating temperature range of -55°C to +150°C.

Single FETs, MOSFETs Selection Notes

Select this component when a compact SOT323 footprint is required for low-voltage switching applications. The low gate threshold voltage allows compatibility with standard logic levels, while the low on-resistance supports efficient power handling. Verify that the 20V breakdown voltage and 3.1A current ratings align with the circuit's operational demands and thermal constraints.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2055UW series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic SOT323 case with a UL flammability classification rating of 94V-0. The device is designed for surface mount assembly and offers moisture sensitivity level 1 per J-STD-020.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 20V BVDSS, 3.1A ID, and SOT323 package. Verify pinout compatibility and ensure equivalent RDS(ON) and Qg specifications are met to maintain circuit performance without modification.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage (VGSS) rating is ±8V.

Is this component suitable for automotive applications?

For automotive applications requiring specific change control or AEC-Q qualification, customers must contact Diodes Incorporated directly as standard parts may not meet these specific requirements.