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DMN2058U-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 4.6A SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2058U-13
- Description：MOSFET N-CH 20V 4.6A SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 10V
- Rds On (Max) @ Id, Vgs：35mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.7 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：281 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.13W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMN2058U-13
Single FETs, MOSFETs Overview
The DMN2058U-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (VDS) of 20V and a maximum continuous drain current (ID) of 4.6A at 25°C. The device exhibits a low on-state resistance (RDS(ON)) of 35mΩ at VGS=10V and 40mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C, with power dissipation rated at 0.74W or 1.13W depending on thermal conditions.
Single FETs, MOSFETs Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
- Features low gate threshold voltage and low input capacitance to support fast switching speeds.
- Constructed with totally lead-free materials that are fully RoHS compliant and halogen- and antimony-free.
Single FETs, MOSFETs Applications
- Battery Charging
- Power Management Functions
- DC-DC Converters
- Portable Power Adaptors
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm compliance requirements against EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure application environments do not exceed the specified maximum ratings for junction temperature and power dissipation.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a 20V N-channel MOSFET in an SOT23 package. Evaluate RDS(ON) specifications at relevant gate drive voltages (e.g., 4.5V vs 10V) to ensure adequate current handling. Consider thermal resistance values when determining heat dissipation needs for steady-state versus pulsed operation scenarios.
Single FETs, MOSFETs Part Context
This part belongs to the DMN2058U series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a standard SOT23 surface-mount case constructed from molded plastic with matte tin annealed terminals over a copper lead-frame. The device is designed for general-purpose switching and power management tasks.
Single FETs, MOSFETs Replacement Considerations
The DMN2058U-7 is a verified substitute offering identical electrical characteristics but packaged in a 3,000-unit tape and reel format instead of the 10,000-unit configuration.
Single FETs, MOSFETs FAQ
What is the typical turn-on delay time for the DMN2058U?
The typical turn-on delay time (tD(ON)) is 2.0 ns under test conditions of VGS = 4.5V, VDD = 10V, RG = 6Ω, and ID = 6.0A.
Does the DMN2058U include an integrated body diode?
Yes, the datasheet specifies a Maximum Body Diode Forward Current (IS) of 1.2A and provides data for Diode Forward Voltage (VSD) and Reverse Recovery Time (tRR).
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