DMN2058U-7

$0.36

Description：MOSFET N-CH 20V 4.6A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f8b1e9adedb5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2058U-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 4.6A SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2058U-7

Description：MOSFET N-CH 20V 4.6A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 10V
Rds On (Max) @ Id, Vgs：35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.7 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：281 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.13W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN2058U-7

DMN2058U-7

Single FETs, MOSFETs Overview

The DMN2058U-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20V and a continuous drain current of 4.6A at 25°C ambient temperature. The device offers a low on-resistance of 35mΩ at VGS=10V and 40mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-23 package.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage characteristics.

Single FETs, MOSFETs Applications

Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors

Single FETs, MOSFETs Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS38468 Rev. 2-2 to confirm specifications. Ensure the ordering suffix matches the required packaging quantity, as the -7 suffix indicates a tape and reel configuration. Confirm compliance with RoHS directives and verify that the product is halogen- and antimony-free if environmental standards are required for the assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance and fast switching capabilities is needed for portable or battery-powered systems. Consider the thermal resistance values provided for different mounting conditions to ensure adequate heat dissipation. Evaluate the gate charge requirements against the driving circuit's capability to achieve optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2058U series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for high-efficiency power management tasks where minimizing conduction losses is critical. The series utilizes a lead-free, fully RoHS-compliant manufacturing process suitable for modern electronics assembly lines.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 20V N-channel MOSFETs in the SOT-23 package. Verify that any substitute maintains equivalent RDS(ON) levels, gate threshold voltages, and thermal characteristics to ensure circuit compatibility without redesigning the PCB layout or driver stage.