DMN2058UW-7

$0.29

Description：MOSFET N-CH 20V 3.5A SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:00c52147bfa0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2058UW-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 3.5A SOT323. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2058UW-7

Description：MOSFET N-CH 20V 3.5A SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 10V
Rds On (Max) @ Id, Vgs：42mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.7 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：281 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for DMN2058UW-7

DMN2058UW-7

Single FETs, MOSFETs Overview

The DMN2058UW-7 is an N-channel enhancement mode MOSFET in a SOT323 surface-mount package. It features a drain-source voltage (V_DSS) of 20 V and a maximum continuous drain current (I_D) of 3.5 A at +25°C. The device offers low on-state resistance, specified as 42 mΩ max at V_GS = 10 V and 45 mΩ max at V_GS = 4.5 V. Total gate charge is 7.7 nC at V_GS = 10 V. Operating temperature range spans from -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Totally lead-free and fully RoHS compliant, with halogen and antimony free "Green" device construction.

Single FETs, MOSFETs Applications

Motor Control
Power Management Functions
Backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Ensure that the selected component meets all applicable environmental compliance standards required for the target assembly process. Cross-reference the datasheet revision number to validate electrical characteristics prior to final procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low input capacitance and fast switching speeds within a compact SOT323 footprint. Evaluate thermal resistance parameters relative to the PCB copper coverage and ambient operating conditions. Confirm that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2058U series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The product utilizes silicon technology and is housed in a molded plastic SOT323 case with matte tin annealed terminals over an alloy 42 leadframe. The marking code for the device is 58U.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Do not assume functional equivalence based solely on package type or generic voltage ratings without verifying pinout and electrical parameter alignment.