DMN2075U-7

$0.30

Description：MOSFET N-CH 20V 4.2A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dd6adfdf7d44 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2075U-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 4.2A SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2075U-7

Description：MOSFET N-CH 20V 4.2A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：38mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：594.3 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN2075U-7

DMN2075U-7

Single FETs, MOSFETs Overview

The DMN2075U-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDSS) of 20 V and a continuous drain current (ID) of 4.2 A at +25°C. The device exhibits a typical static drain-source on-resistance (RDS(ON)) of 25 mΩ at VGS = 4.5V. It operates within a temperature range of -55°C to +150°C and dissipates up to 0.8 W of power. Packaged in a surface-mount SOT-23 case, it includes fast switching characteristics with turn-on delay time of 7.4 ns and total gate charge of 7.0 nC.

Single FETs, MOSFETs Feature Summary

Low on-resistance for high efficiency
Fast switching speed capabilities
Qualified to AEC-Q101 standards for automotive reliability

Single FETs, MOSFETs Applications

High reliability electronic circuits
Power management applications requiring low input capacitance
Surface mount assembly designs

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm the datasheet revision matches the specific manufacturing lot. Ensure compliance with RoHS directives and halogen-free requirements as specified in the manufacturer's documentation. Validate package dimensions against the provided SOT-23 outline drawings prior to PCB layout finalization.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 20 V N-channel MOSFET with low on-resistance. Consider the thermal resistance of 156 °C/W when calculating heat dissipation limits. Evaluate the gate threshold voltage range to ensure compatibility with the intended logic drive levels. Verify that the operating temperature range meets the environmental constraints of the target application.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT-23 surface-mount package. The product line emphasizes low input leakage and green manufacturing processes compliant with environmental regulations.