DMN2104L-7

$0.46

Description：MOSFET N-CH 20V 4.3A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:76e5c256733f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2104L-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 4.3A SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2104L-7

Description：MOSFET N-CH 20V 4.3A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：53mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：325 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN2104L-7

DMN2104L-7

Single FETs, MOSFETs Overview

The DMN2104L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 20V drain-source voltage rating and a continuous drain current of 4.3A. The device exhibits low on-resistance, measuring 53mΩ at VGS=4.5V and 104mΩ at VGS=2.5V. It has a gate threshold voltage range of 0.45V to 1.4V and a total power dissipation capability of 1.4W. Packaged in SOT-23, it operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low on-resistance for efficient conduction
Fast switching speed with low input capacitance
Qualified to AEC-Q101 standards for high reliability

Single FETs, MOSFETs Applications

Power management circuits
Load switches
DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the component meets RoHS compliance and lead-free requirements as specified in the datasheet notes. Ensure the application environment remains within the rated thermal resistance and junction temperature limits to maintain performance integrity.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for space-constrained designs. Consider the 20V breakdown voltage and 4.3A continuous current capabilities against the load requirements. Evaluate the thermal performance based on the 90°C/W junction-to-ambient resistance for the intended PCB layout.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of single N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a surface-mount SOT-23 case style designed for automated assembly processes. The device is constructed using silicon technology and is intended for general-purpose switching applications requiring high reliability.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Diodes Incorporated parts in the DMN series for pin-compatible alternatives. Verify that any substitute matches the 20V VDS rating, SOT-23 package dimensions, and electrical characteristics such as RDS(on) and ID before implementation.