DMN21D2UFB-7

$0.34

Description：MOSFET BVDSS: 8V~24V X1-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bbfa71d8d1f6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN21D2UFB-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V X1-DFN1006-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN21D2UFB-7

Description：MOSFET BVDSS: 8V~24V X1-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.93 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：27.6 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：380mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1006-3
Package / Case：3-UFDFN

Single FETs, MOSFETs datasheet and documents for DMN21D2UFB-7

DMN21D2UFB-7

Single FETs, MOSFETs Overview

The DMN21D2UFB-7B is a 20V N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in an X1-DFN1006-3 surface-mount case. It features a maximum drain-source voltage of 20V and a continuous drain current of 760mA at +25°C. The device offers a typical on-resistance of 0.6Ω at VGS=4.5V and 0.9V at VGS=2.5V. Operating temperatures range from -55°C to +150°C with a power dissipation of 0.38W.

Single FETs, MOSFETs Feature Summary

Ultra-small 1mm x 0.6mm surface mount package with low profile
Low on-state resistance for high efficiency power management
Very low gate threshold voltage for fast switching performance
ESD protected gate structure

Single FETs, MOSFETs Applications

General purpose interfacing switch
Power management functions
Analog switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm reel size and quantity per reel. Confirm RoHS compliance status and lead-free specifications directly with the manufacturer or authorized distributors before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring compact footprint and efficient switching at low voltages. Evaluate thermal resistance and power dissipation limits relative to the PCB layout and ambient operating conditions to ensure reliable performance within specified temperature ranges.

Single FETs, MOSFETs Part Context

This part belongs to the DMN21 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed for general-purpose switching applications where low on-resistance and small physical dimensions are critical design parameters.