DMN21D2UFB-7B

Single FETs, MOSFETs Overview

The DMN21D2UFB is a 20V N-channel enhancement mode MOSFET in an X1-DFN1006-3 package. It features a maximum drain-source voltage (VDSS) of 20V and a gate-source voltage (VGSS) of ±12V. The static drain-source on-resistance (RDS(ON)) is 0.99Ω max at VGS=4.5V, 1.2Ω max at VGS=2.5V, 2.4Ω max at VGS=1.8V, and 3.0Ω max at VGS=1.5V. Continuous drain current (ID) reaches 760mA at TA=+25°C. Gate threshold voltage (VGS(TH)) is 1.0V max. Input capacitance (Ciss) is 27.6pF typical.

Single FETs, MOSFETs Feature Summary

• Ultra-small surface mount package with a maximum height of 0.5mm
• Low on-resistance optimized for high efficiency power management
• Very low gate threshold voltage enabling easy drive compatibility
• ESD protected gate structure for enhanced reliability

Single FETs, MOSFETs Applications

• General purpose interfacing switch
• Power management functions
• Analog switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm reel size and tape width specifications. The -7B suffix indicates a 10,000 quantity per reel with an 8mm tape width. Ensure the component meets RoHS 3 and halogen-free requirements if mandated by the design specification. Confirm JEDEC qualification status for high-reliability applications.

Single FETs, MOSFETs Selection Notes

Select this device for space-constrained designs requiring a 20V rating. Evaluate RDS(ON) performance against the specific gate drive voltage available in the system, as resistance varies significantly between 1.5V and 4.5V drives. Consider the thermal resistance characteristics when determining heat dissipation needs on the PCB layout.

Single FETs, MOSFETs Part Context

This component belongs to Diodes Incorporated's DMN series of N-channel MOSFETs. It utilizes the X1-DFN1006-3 package, which provides a compact footprint suitable for portable electronics. The part is designed to minimize on-state resistance while maintaining fast switching speeds for efficient power control.

Single FETs, MOSFETs Replacement Considerations

For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, refer to the related Q-suffix parts listed by the manufacturer. Verify pinout and electrical parameters before substituting with other 20V N-channel MOSFETs in similar packages.