DMN2230U-7

$0.41

Description：MOSFET N-CH 20V 2A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2152e81614ec Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2230U-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 2A SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2230U-7

Description：MOSFET N-CH 20V 2A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：110mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：188 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：600mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN2230U-7

DMN2230U-7

Single FETs, MOSFETs Overview

The DMN2230U-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 20V drain-source voltage rating and supports a continuous drain current of 2.0A at 25°C, with a pulsed current capability of 7A. The device operates within a temperature range of -55°C to +150°C. Key electrical characteristics include a maximum static drain-source on-resistance of 110mΩ at VGS=4.5V and 145mΩ at VGS=2.5V. It utilizes a SOT23 package and is supplied in tape and reel quantities of 3,000 units.

Single FETs, MOSFETs Feature Summary

Low on-resistance optimized for various gate drive voltages
Fast switching speed with low input capacitance
Qualified to JEDEC standards for high reliability applications

Single FETs, MOSFETs Applications

Power management circuits
Load switches
DC-DC converter output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (DS31180 Rev. 6) matches your design requirements. Confirm that the SOT23 package dimensions align with your PCB footprint. Ensure the 3,000-unit tape and reel packaging quantity fits your production volume constraints. Check for any RoHS compliance documentation updates if required by your supply chain regulations.

Single FETs, MOSFETs Selection Notes

Select this component when a 20V N-channel MOSFET with low RDS(ON) is required. Consider the 110mΩ resistance at 4.5V VGS for standard logic-level driving. Evaluate the thermal resistance of 208°C/W for heat dissipation needs. Verify compatibility with the SOT23 form factor against available board space.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for general-purpose switching applications requiring low conduction losses. The device is constructed using silicon technology and is housed in a lead-free SOT23 package suitable for surface mount assembly.