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DMN2230UQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 2A SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2230UQ-13
- Description：MOSFET N-CH 20V 2A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：110mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.3 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：188 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：600mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMN2230UQ-13
Single FETs, MOSFETs Overview
The DMN2230UQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (BVDSS) of 20V and a continuous drain current (ID) of 2.0A. The device operates with a gate-source voltage range of ±20V and dissipates up to 600mW of power. It is housed in a compact SOT-323 surface-mount package, designed for efficient switching applications within low-voltage circuits.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode operation
- Compact SOT-323 surface-mount packaging
- Low voltage rating suitable for portable electronics
Single FETs, MOSFETs Applications
- Battery protection circuits
- Power management systems
- Portable consumer devices
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm exact electrical tolerances and tape-and-reel specifications. Ensure compatibility with existing PCB footprints and thermal management requirements before integration into final designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a 20V rated N-channel switch with moderate current handling capabilities. The SOT-323 package offers space efficiency for dense layouts. Confirm that the 600mW power dissipation limit aligns with the thermal constraints of the target enclosure and operating environment.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of small-signal MOSFETs from Diodes Incorporated. These components are engineered for general-purpose switching tasks in low-power environments. The series emphasizes miniaturization and reliability for modern electronic assemblies.
Single FETs, MOSFETs Replacement Considerations
Consult manufacturer cross-reference lists for verified substitutes. Ensure any alternative maintains identical pinout configuration, voltage ratings, and package dimensions to guarantee functional equivalence without redesign.
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