DMN2230UQ-7

$0.40

Description：MOSFET N-CH 20V 2A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:625a0924b608 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2230UQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 2A SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2230UQ-7

Description：MOSFET N-CH 20V 2A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：110mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2.3 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：188 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：600mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN2230UQ-7

DMN2230UQ-7

Single FETs, MOSFETs Overview

The DMN2230UQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT-23 package. It features a drain-source voltage (VDSS) of 20V and a continuous drain current (ID) of 2.0A at +25°C, with a pulsed drain current (IDM) of 7A. The device offers low on-state resistance (RDS(ON)) of 110mΩ at VGS=4.5V and 145mΩ at VGS=2.5V. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from 0.5V to 1.0V, total gate charge (Qg) of 2.3nC, and input capacitance (Ciss) of 188pF. Thermal characteristics specify a maximum power dissipation (PD) of 600mW and a junction-to-ambient thermal resistance (RθJA) of 208°C/W. Operating temperature range spans from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input capacitance
Low gate threshold voltage for easy drive compatibility
Automotive qualified under AEC-Q101 standards

Single FETs, MOSFETs Applications

General purpose interfacing switches
Power management functions
Boost applications
Analog switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance and halogen-free requirements if environmental specifications are mandatory for the intended assembly process. Ensure design reviews account for the 'Not Recommended for New Design' status indicated in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a 20V N-channel MOSFET with low RDS(ON) is required for compact SOT-23 layouts. Consider the 2.0A continuous current rating and 600mW power dissipation limits for thermal management. Evaluate the 0.5V to 1.0V gate threshold voltage against the driving logic levels to ensure reliable turn-on. Verify suitability for automotive applications requiring IATF 16949 manufacturing certification.

Single FETs, MOSFETs Part Context

The DMN2230UQ-7 belongs to the DMN2230UQ family of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is housed in a standard SOT-23 surface-mount package designed for space-constrained PCB applications. The product line emphasizes minimizing on-state resistance while maintaining fast switching performance for efficient power control.

Single FETs, MOSFETs Replacement Considerations

The datasheet explicitly recommends using the DMN2053UQ as the replacement part for new designs, noting that the DMN2230UQ is not recommended for new design implementations.

Single FETs, MOSFETs FAQ

Is the DMN2230UQ suitable for automotive applications?

Yes, the DMN2230UQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.