DMN2300UFB-7B

Single FETs, MOSFETs Overview

The DMN2300UFB-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 20 V and a gate-source voltage (VGS) rating of ±8 V. The device offers a typical on-resistance (RDS(ON)) of 175 mΩ at VGS = 4.5 V with a continuous drain current (ID) of 1.32 A at +25°C. It utilizes an X1-DFN1006-3 surface-mount package, providing a footprint of 0.6 mm² and a profile height of 0.5 mm. The component operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Ultra-small footprint design measuring 0.6mm², significantly reducing board space requirements compared to traditional SOT-23 packages.
• Low-profile construction with a 0.5mm height, suitable for applications requiring compact vertical clearance.
• Integrated ESD protection on the gate terminal to enhance reliability against electrostatic discharge events.
• Lead-free and fully RoHS compliant construction, ensuring compliance with environmental directives.

Single FETs, MOSFETs Applications

• Load switching in portable electronic devices
• High-efficiency power management circuits
• Battery-powered equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7B' corresponds to the 10,000 units per reel packaging configuration as defined in the manufacturer's documentation. Confirm that the X1-DFN1006-3 package dimensions align with the target PCB pad layout, as this footprint differs from standard SOT-23 designs. Ensure procurement channels are authorized to maintain product integrity and traceability.

Single FETs, MOSFETs Selection Notes

Select this component when board area constraints are critical, given its minimal 0.6mm² footprint. Consider the 20V breakdown voltage and 175mΩ on-resistance for low-voltage load switching applications. Evaluate the thermal performance based on the specific copper plane area available on the PCB, as power dissipation capabilities vary significantly between minimum pad layouts and larger heat-sinking configurations.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2300 series of N-channel MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining fast switching speeds. The 'UFB' designation indicates the specific X1-DFN1006-3 package variant, distinguishing it from other package options like SOT-23 or DFN variants within the broader product family.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the DMN2300UFB-7, which shares identical electrical characteristics but comes in a 3,000-unit reel packaging format. Other DMN2300 series parts may offer different package footprints or current ratings and require careful verification of pinout and thermal parameters before substitution.