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DMN2310UT-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT523 T&R. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2310UT-7
- Description：MOSFET BVDSS: 8V~24V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：240mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：38 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：290mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
Single FETs, MOSFETs datasheet and documents for DMN2310UT-7
Single FETs, MOSFETs Overview
The DMN2310UT-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±8V. The device offers a maximum continuous drain current (ID) of 1.2A at +25°C, with a typical static drain-source on-resistance (RDS(ON)) of 240mΩ at VGS = 4.5V and 300mA. Total power dissipation (PD) is rated at 0.29W in steady state. Operating and storage temperatures range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Ultra-small surface mount package for space-constrained designs
- Low input capacitance and fast switching speed
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Single FETs, MOSFETs Applications
- DC-DC converters
- Load switches
- Power management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The standard tape and reel configuration requires checking the manufacturer's website or datasheet for exact quantities per reel. Ensure compliance with environmental directives such as RoHS 3 and halogen-free requirements during procurement planning.
Single FETs, MOSFETs Selection Notes
Select this component when low on-resistance and superior switching performance are required for high-efficiency power management. The SOT523 package is suitable for applications needing minimal board space. Evaluate thermal resistance characteristics based on the specific PCB copper area and mounting conditions to ensure safe operation within the specified temperature limits.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining fast switching capabilities. The device utilizes silicon technology and is housed in an ultra-small SOT523 case material made of molded plastic with a green molding compound.
Single FETs, MOSFETs Replacement Considerations
For automotive applications requiring specific change control, contact Diies directly or consult the separate datasheet for the DMN2310UTQ variant. Verify pinout compatibility and electrical parameters before substituting with other manufacturers' parts.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
