DMN2310UTQ-7

Single FETs, MOSFETs Overview

The DMN2310UTQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and an ultra-small SOT523 surface-mount package. The device provides a typical static drain-source on-resistance (RDS(on)) of 240mΩ at VGS = 4.5V with a continuous drain current of 1.2A at +25°C. Key electrical parameters include a gate threshold voltage ranging from 0.45V to 0.95V, total gate charge of 0.7nC, and input capacitance of 38pF. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Ultra-small SOT523 surface mount package for space-constrained designs
• Low on-resistance optimized for high-efficiency power management
• Fast switching speed supported by low input capacitance and gate charge
• ESD protected gate structure

Single FETs, MOSFETs Applications

• DC-DC converters
• Load switches
• Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm RoHS compliance status and environmental declarations directly with the manufacturer or authorized distributors before procurement. Ensure the selected component matches the required thermal and electrical ratings for the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for 20V applications. Consider the SOT523 package dimensions and thermal resistance characteristics for PCB layout planning. Evaluate the gate threshold voltage range to ensure compatibility with the intended logic drive levels and switching requirements.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance in small packages. The DMN2310UTQ specifically targets high-efficiency power management applications requiring compact footprints.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists or contact Diodes Incorporated for verified substitute part numbers. Do not assume functional equivalence based solely on similar pinouts or voltage ratings without verifying datasheet specifications.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is 1.2A at TA = +25°C and 1.0A at TA = +75°C.

Is the device suitable for automotive applications?

For automotive applications requiring AEC-Q100/101/200 qualification and PPAP capability, customers must contact Diodes Incorporated or their local representative directly.