Single FETs, MOSFETs DMN2310UWQ-13 product image

DMN2310UWQ-13

$0.03
  • Description:MOSFET BVDSS: 8V~24V SOT323 T&R
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:7c008182ee71 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

DMN2310UWQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT323 T&R. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2310UWQ-13

  • Description:MOSFET BVDSS: 8V~24V SOT323 T&R
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:200mOhm @ 300mA, 4.5V
  • Vgs(th) (Max) @ Id:950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:38 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):450mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-323
  • Package / Case:SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for DMN2310UWQ-13

DMN2310UWQ-13

Single FETs, MOSFETs Overview

The DMN2310UWQ-13 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT323 package. It features a maximum drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 1.3A at +25°C. The device offers low on-state resistance, rated at 200mΩ maximum at VGS = 4.5V and 280mΩ at VGS = 2.5V. It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Designed for high-efficiency power-management applications with minimized on-state resistance and superior switching performance.
  • Qualified for automotive applications requiring specific change control, meeting AEC-Q101 standards and PPAP capability.
  • Manufactured in IATF 16949 certified facilities using totally lead-free, fully RoHS compliant, and halogen/antimony free materials.

Single FETs, MOSFETs Applications

  • General purpose interfacing switches
  • Power-management functions
  • DC-DC converters
  • Analog switches

Single FETs, MOSFETs Procurement Notes

Verify the component against the official datasheet DS42969 Rev. 3 to confirm electrical parameters and package dimensions. Ensure compliance with automotive quality requirements if applicable, specifically checking for AEC-Q101 qualification status and IATF 16949 manufacturing certification. Confirm environmental compliance regarding RoHS and halogen-free specifications prior to integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact SOT323 footprint with low on-resistance characteristics suitable for 20V logic-level switching. Consider the thermal resistance and power dissipation limits when designing for high-current loads or elevated ambient temperatures. Verify gate threshold voltage compatibility with the driving circuit's output levels to ensure reliable turn-on and turn-off states.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on providing low on-resistance and fast switching speeds in small surface-mount packages. The DMN2310UWQ variant specifically targets general-purpose and automotive-grade applications requiring robust performance in minimal space.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same manufacturer's portfolio that match the 20V rating, SOT323 package, and similar RDS(ON) specifications. Verify pinout compatibility and thermal characteristics before substituting with components from other manufacturers to ensure circuit integrity.

Single FETs, MOSFETs FAQ

Is the DMN2310UWQ-13 qualified for automotive applications?

Yes, the DMN2310UWQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.

What is the maximum operating junction temperature for this MOSFET?

The maximum operating and storage temperature range for the DMN2310UWQ extends up to +150°C.

DMN2310UWQ-13DMN2310UWQ-13
$0.03
Buy Now