DMN2310UWQ-7

Single FETs, MOSFETs Overview

The DMN2310UWQ-7 is a 20V N-channel enhancement mode MOSFET in an SOT323 package. It features a maximum drain-source on-resistance of 200mΩ at VGS=4.5V and 280mΩ at VGS=2.5V, with a continuous drain current of 1.3A at +25°C. The device includes ESD protection and has a gate threshold voltage ranging from 0.45V to 0.95V. Total gate charge is typically 0.7nC at VGS=4.5V and VDS=10V.

Single FETs, MOSFETs Feature Summary

• Low on-resistance for high-efficiency power management
• Fast switching speed with low input capacitance
• ESD protected gate structure
• Suitable for automotive applications requiring specific change control

Single FETs, MOSFETs Applications

• General purpose interfacing switches
• Power-management functions
• DC-DC converters
• Analog switches

Single FETs, MOSFETs Procurement Notes

Verify the part number suffix matches the required packing quantity, as -7 indicates 3,000 units per tape and reel while -13 indicates 10,000 units. Confirm that the sourcing channel is authorized by Diodes Incorporated to ensure compliance with standard terms and conditions. Check for AEC-Q101 qualification requirements if the application involves automotive systems.

Single FETs, MOSFETs Selection Notes

Select this component when a compact SOT323 footprint is required for low-voltage switching applications. The low gate threshold voltage supports operation with low-power logic controllers. Ensure the thermal design accommodates the junction-to-ambient resistance of 275°C/W on a minimal FR-4 substrate for steady-state operations.

Single FETs, MOSFETs Part Context

This device belongs to the DMN2310 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management solutions in small surface-mount packages.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include other DMN2310 variants such as DMN2310UFD or DMN2310UT, provided the package type (SOT323) and electrical ratings are compatible. Verify that any substitute maintains the same AEC-Q101 qualification status if used in automotive contexts.

Single FETs, MOSFETs FAQ

Is the DMN2310UWQ-7 suitable for automotive applications?

Yes, the DMN2310UWQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.

What is the maximum pulsed drain current?

The maximum pulsed drain current is 4.4A, measured with a 10µs pulse duration and a duty cycle of 1%.