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DMN2400UFB4-7R is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH X2-DFN1006-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2400UFB4-7R
- Description：MOSFET N-CH X2-DFN1006-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：550mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：470mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
Single FETs, MOSFETs datasheet and documents for DMN2400UFB4-7R
Single FETs, MOSFETs Overview
The DMN2400UFB4-7R is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X2-DFN1006-3 surface mount package with a maximum height of 0.4mm. The device supports a continuous drain current of 0.75A at 25°C and withstands pulsed currents up to 3A. Electrical characteristics include a maximum on-resistance of 0.55Ω at VGS=4.5V, a gate threshold voltage ranging from 0.5V to 0.9V, and low input capacitance of 36pF. It is qualified to AEC-Q101 standards for high reliability.
Single FETs, MOSFETs Feature Summary
- Ultra-small X2-DFN1006-3 surface mount package with ultra-low profile
- Low on-resistance and low gate threshold voltage for efficient switching
- ESD protection rated up to 1.5kV
- Qualified to AEC-Q101 standards for automotive high reliability
Single FETs, MOSFETs Applications
- Battery management systems
- Power switches in portable devices
- Load switch applications
Single FETs, MOSFETs Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS32025 Rev. 9. Confirm that the marking code matches 'NC' and the package corresponds to X2-DFN1006-3. Ensure compliance with RoHS 3 and Halogen-free requirements as specified in the manufacturer's documentation.
Single FETs, MOSFETs Selection Notes
Select this component for space-constrained designs requiring a 20V N-channel MOSFET. Consider the thermal resistance of 258°C/W when designing PCB layouts. Note that the datasheet explicitly states this part is not recommended for new designs and suggests using the DMN2450UFB4 instead.
Single FETs, MOSFETs Part Context
This component belongs to the DMN2400 series of small signal field-effect transistors produced by Diodes Incorporated. It utilizes silicon metal-oxide semiconductor technology and is housed in a plastic X2-DFN1006-3 case. The product line is designed for general-purpose switching applications in consumer electronics.
Single FETs, MOSFETs Replacement Considerations
The datasheet explicitly recommends using the DMN2450UFB4 as a replacement. Verify pin compatibility and electrical specifications before substituting.
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