DMN2400UFD-7

$0.37

Description：MOSFET N-CH 20V 900MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:381ec24b59cc Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMN2400UFD-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 900MA 3DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2400UFD-7

Description：MOSFET N-CH 20V 900MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：600mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：500 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：37 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1212-3
Package / Case：3-UDFN

Single FETs, MOSFETs datasheet and documents for DMN2400UFD-7

DMN2400UFD-7

Single FETs, MOSFETs Overview

The DMN2400UFD-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage rating of ±12V. The device offers low on-resistance, specified as 0.6Ω max at VGS=4.5V with ID=200mA, and 0.8Ω max at VGS=2.5V with ID=200mA. Continuous drain current reaches 0.9A at VGS=4.5V and 0.7A at VGS=2.5V under steady-state conditions at +25°C. Total power dissipation is rated at 0.4W on FR-4 PCBs and 0.8W with thermal vias. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low on-resistance for high efficiency power management
Very low gate threshold voltage up to 1.0V max
ESD protected gate structure
Qualified to AEC-Q101 standards for high reliability

Single FETs, MOSFETs Applications

Power management functions
Battery operated systems
Solid-state relays
Load switch applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance and lead-free status. Check package marking codes for date code verification. Ensure proper handling due to ESD sensitivity. Review datasheet revision history for updates.

Single FETs, MOSFETs Selection Notes

Consider the 20V breakdown voltage limit for circuit design. Evaluate thermal resistance requirements based on mounting method. Assess gate drive voltage compatibility with the low threshold specification. Verify current ratings against peak load demands. Check package dimensions for PCB layout constraints.

Single FETs, MOSFETs Part Context

This component belongs to Diodes Incorporated's DMN series of small signal MOSFETs. It utilizes the X1-DFN1212-3 surface mount package. The device is designed for compact electronic applications requiring efficient switching capabilities in minimal space.