DMN2400UFDQ-13

Single FETs, MOSFETs Overview

The DMN2400UFDQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN1212-3 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 900 mA at 25°C. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 350 mΩ, a gate-source threshold voltage (Vgs(th)) of 450 mV, and a total gate charge (Qg) of 500 pC. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 800 mW.

Single FETs, MOSFETs Feature Summary

• Single N-channel enhancement mode configuration for efficient switching applications
• Automotive qualification compliant with AEC-Q101 standards
• Low gate threshold voltage enabling effective drive from low-voltage logic interfaces
• Compact U-DFN1212-3 package designed for space-constrained PCB layouts

Single FETs, MOSFETs Applications

• Battery protection circuits in portable electronic devices
• Load switching in automotive infotainment systems
• Power management modules for consumer electronics
• General-purpose high-side or low-side switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'Q' indicates AEC-Q101 automotive qualification status against the manufacturer's official datasheet. Confirm that the '13' suffix corresponds to the correct tape and reel quantity specified in the ordering information. Ensure the component meets RoHS compliance requirements as stated in the product documentation before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 20 V rated N-channel MOSFET with low gate charge is required for automotive-grade reliability. The 350 mΩ on-resistance at 900 mA offers a balance between conduction loss and switching speed. Consider the U-DFN1212-3 footprint constraints and thermal dissipation capabilities relative to the 800 mW power rating during circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of ultra-small MOSFETs from Diodes Incorporated. The series focuses on minimizing board space while maintaining robust performance for portable and automotive applications. The U-DFN1212-3 package is a standard form factor within this family, offering thermal efficiency suitable for dense modern electronics designs.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes such as the DMN2400UFD or DMN2400UV if the automotive grade is not strictly required. Verify pin compatibility and electrical parameters match exactly before substituting.