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DMN2450UFD-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 900MA 3DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2450UFD-7
- Description：MOSFET N-CH 20V 900MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：600mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：52 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：400mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1212-3
- Package / Case：3-UDFN
Single FETs, MOSFETs datasheet and documents for DMN2450UFD-7
Single FETs, MOSFETs Overview
The DMN2450UFD-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and operates within a junction temperature range of -55°C to +150°C. The device utilizes an X1-DFN1212-3 package with a lead-free, RoHS-compliant construction. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from 0.45V to 1.0V at ID=250μA. Static drain-source on-resistance (RDS(ON)) varies based on gate drive conditions: 0.6Ω max at VGS=4.5V/ID=200mA, 0.8Ω max at VGS=2.5V/ID=200mA, 1.0Ω max at VGS=1.8V/ID=100mA, and 1.6Ω max at VGS=1.5V/ID=50mA.
Single FETs, MOSFETs Feature Summary
- Low on-resistance optimized for high efficiency power management applications
- Very low gate threshold voltage enabling operation with low logic levels
- Low input capacitance supporting fast switching speeds
- ESD protected gate structure
Single FETs, MOSFETs Applications
- Power management functions
- Battery operated systems
- Solid-state relays
- Load switch circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable RoHS directives and halogen-free requirements as defined by the manufacturer's quality standards. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring a compact footprint with an X1-DFN1212-3 package. Consider the low gate threshold voltage for compatibility with low-voltage control signals. Evaluate the thermal resistance characteristics against the expected power dissipation in the target application environment.
Single FETs, MOSFETs Part Context
This part belongs to the DMN2450 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The DMN2450UFD variant specifically denotes the X1-DFN1212-3 surface-mount package configuration.
Single FETs, MOSFETs Replacement Considerations
Consult official datasheets for alternative part numbers offering compatible pinouts and electrical ratings. Verify that any substitute component matches the required voltage, current, and thermal specifications before implementation.
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