DMN2451UFB4-7B

$0.04

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:253569ee94a9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2451UFB4-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V X2-DFN1006-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2451UFB4-7B

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：32 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：660mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

Single FETs, MOSFETs datasheet and documents for DMN2451UFB4-7B

DMN2451UFB4-7B

Single FETs, MOSFETs Overview

The DMN2451UFB4-7B is an N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in a compact X2-DFN1006-3 footprint. It features a drain-source voltage (V_DSS) of 20V and a gate-source voltage (V_GSS) rating of ±12V. The device offers a maximum on-resistance (R_DS(ON)) of 0.4Ω at V_GS = 4.5V with a continuous drain current (I_D) of 1.3A at +25°C. Additional electrical characteristics include a gate threshold voltage (V_GS(TH)) ranging from 0.5V to 1.0V, total gate charge (Q_g) of 3.4nC at V_GS = 4.5V, and input capacitance (C_iss) of 32pF.

Single FETs, MOSFETs Feature Summary

Extremely small footprint of 0.6mm², significantly reducing board space compared to traditional SOT23 packages.
Low profile construction with a case height of 0.4mm, suitable for space-constrained applications.
Integrated ESD protection on the gate terminal to enhance component reliability.
Fast switching speed combined with low gate threshold voltage for efficient power management.

Single FETs, MOSFETs Applications

Load switching circuits
High efficiency power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7B' against official Diodes documentation to confirm reel size and tape width specifications. Ensure that the required packaging quantity aligns with the manufacturer's standard reel configuration. Confirm RoHS compliance status and 'Green' device attributes directly through the supplier or manufacturer datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when minimizing PCB area is critical due to its ultra-small X2-DFN1006-3 package. Consider its low R_DS(ON) performance at various gate voltages for optimizing conduction losses in power paths. Evaluate the thermal resistance parameters relative to the target application's copper pad layout to ensure adequate heat dissipation within the specified operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2451UFB4 series of N-channel MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is housed in a lead-free, molded plastic case classified as UL 94V-0. The product is fully compliant with EU RoHS directives and is manufactured without intentionally added lead, halogens, or antimony.

Single FETs, MOSFETs Replacement Considerations

Consult official Diodes documentation for confirmed substitute part numbers. Do not assume functional equivalence based solely on similar package types or generic voltage ratings without verifying detailed electrical parameters.