DMN2451UFDQ-7

Single FETs, MOSFETs Overview

The DMN2451UFDQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN1212-3 surface-mount package. The device features a drain-source breakdown voltage (BVDSS) of 20V and a maximum gate-source voltage (VGSS) of ±12V. At TA = +25°C, the continuous drain current (ID) reaches 1.1A at VGS = 4.5V, with a static drain-source on-resistance (RDS(ON)) of 0.6Ω max. The component operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Designed for high-efficiency power management applications with minimized on-state resistance while maintaining superior switching performance.
• Features an ESD protected gate structure and very low gate threshold voltage to facilitate low-voltage drive compatibility.
• Qualified for automotive applications requiring specific change control, meeting AEC-Q101 standards and PPAP capability.
• Manufactured in IATF 16949 certified facilities using totally lead-free and fully RoHS compliant processes.

Single FETs, MOSFETs Applications

• Power Management Functions
• Battery Operated Systems
• Solid-State Relays
• Load Switch

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the required packaging quantity, as the -7 suffix indicates a 3,000-unit tape and reel configuration. Confirm compliance requirements such as RoHS and halogen-free status against project specifications. Ensure the U-DFN1212-3 footprint aligns with the PCB layout guidelines provided in the datasheet. Validate that the selected component meets the necessary thermal dissipation constraints for the intended operating environment.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, small-footprint N-channel MOSFET is required for load switching or battery protection. The low gate threshold voltage makes it suitable for systems driven by low logic levels. Consider the thermal resistance characteristics and package size when designing for space-constrained environments. Verify that the 20V rating provides sufficient margin for the specific circuit's peak voltage conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on providing low on-resistance in compact packages suitable for portable and automotive electronics. The U-DFN1212-3 case offers a minimal board area footprint compared to traditional SOT-23 packages, supporting high-density design requirements.

Single FETs, MOSFETs Replacement Considerations

The DMN2451UFDQ-13 serves as a direct substitute with identical electrical characteristics but differs in packaging quantity, utilizing a 10,000-unit tape and reel instead of 3,000 units.

Single FETs, MOSFETs FAQ

Is the DMN2451UFDQ qualified for automotive use?

Yes, the DMN2451UFDQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGSS) rating is ±12V.