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DMN24H3D5L-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 240V 480MA SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN24H3D5L-7
- Description：MOSFET N-CH 240V 480MA SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：240 V
- Current - Continuous Drain (Id) @ 25°C：480mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：3.3V, 10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：188 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：760mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMN24H3D5L-7
Single FETs, MOSFETs Overview
The DMN24H3D5L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V(BR)DSS) of 240 V and a continuous drain current (ID) of 0.48 A at +25°C. The device offers a maximum on-resistance (RDS(ON)) of 3.5 Ω at VGS = 10V or 4.5V, and 6.0 Ω at VGS = 3.3V. Total gate charge (Qg) is 6.6 nC. It operates within a junction temperature range of -55°C to 150°C and is housed in a SOT-23 surface mount package.
Single FETs, MOSFETs Feature Summary
- Low gate threshold voltage for efficient drive requirements
- Low input capacitance supporting fast switching performance
- Totally lead-free and fully RoHS compliant construction
Single FETs, MOSFETs Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories, and Transistors
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and type. The -7 suffix indicates a tape and reel quantity of 3,000 units. Confirm that the component meets required environmental standards such as halogen and antimony-free specifications if mandated by the design. Ensure the manufacturer part number matches the requested electrical characteristics before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a high-voltage N-channel MOSFET with low on-resistance is required in a compact SOT-23 package. The device is suitable for applications demanding superior switching performance alongside minimized conduction losses. Consider the thermal resistance and power dissipation limits relative to the expected operating ambient temperature and duty cycle to ensure reliable operation within the specified safe operating area.
Single FETs, MOSFETs Part Context
This component belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining fast switching speeds. The series targets high-efficiency power management applications where space constraints necessitate small surface-mount packages like SOT-23.
Single FETs, MOSFETs Replacement Considerations
Consult official datasheets for cross-reference information. Verify pinout compatibility, voltage ratings, and thermal characteristics before substituting.
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