ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
DMN24H3D6S-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 101V-250V SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN24H3D6S-13
- Description：MOSFET BVDSS: 101V-250V SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for DMN24H3D6S-13
Single FETs, MOSFETs Overview
The DMN24H3D6S-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT-23 surface-mount package. The device features a drain-source breakdown voltage of 250 V and a continuous drain current rating of 270 mA. Its on-resistance is specified at 11 Ohms, with a gate-source threshold voltage of 1 V. The component supports a maximum gate-source voltage of 20 V and has a gate charge of 3.7 nC. It operates within a temperature range of -55 C to +150 C and dissipates up to 1.2 W of power.
Single FETs, MOSFETs Feature Summary
- Single N-channel enhancement mode configuration
- High voltage capability for robust switching applications
- Small form factor suitable for space-constrained designs
Single FETs, MOSFETs Applications
- General purpose switching circuits
- Low power load management
- Signal isolation interfaces
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official manufacturer documentation to confirm exact electrical tolerances and tape-and-reel specifications. Ensure compatibility with standard SMD/SMT assembly processes. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when high voltage blocking capability is required in a minimal footprint. Evaluate the trade-off between the relatively high on-resistance and the low gate charge for efficiency requirements. Ensure the thermal environment remains within the specified operating temperature limits during operation.
Single FETs, MOSFETs Part Context
This part belongs to the Diodes Incorporated discrete semiconductor portfolio, specifically within the MOSFET category. It represents a standard silicon-based solution designed for general electronic applications requiring reliable switching performance in compact packages.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 250 V breakdown voltage and SOT-23 package dimensions.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
