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DMN2501UFB4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 1A X2-DFN1006-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2501UFB4-7
- Description：MOSFET N-CH 20V 1A X2-DFN1006-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2 nC @ 10 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：82 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
Single FETs, MOSFETs datasheet and documents for DMN2501UFB4-7
Single FETs, MOSFETs Overview
The DMN2501UFB4-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN1006-3 surface-mount package. It features a drain-source breakdown voltage of 20V and a maximum continuous drain current of 1.5A at 25°C. The device offers low on-resistance, specified as 0.4Ω max at VGS=4.5V and 0.7Ω max at VGS=1.8V. Key electrical parameters include a gate threshold voltage of 1.0V max, total gate charge of 1.1nC at VGS=4.5V, and input capacitance of 82pF. It operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Ultra-small surface mount package with ultra-low profile height
- Low on-resistance for high efficiency power management
- Very low gate threshold voltage for easy drive compatibility
- ESD protected gate structure
Single FETs, MOSFETs Applications
- DC-DC Converters
- Power Management Functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging quantity and reel specifications. Ensure compliance with RoHS and AEC-Q101 standards if required by the target application environment. Cross-reference the datasheet revision number to confirm the accuracy of thermal and electrical characteristics before finalizing component selection.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring compact footprint and efficient switching performance. Consider the low gate threshold voltage when designing drive circuits to ensure reliable turn-on at lower control voltages. Evaluate the thermal resistance values based on the expected PCB copper area and ambient operating conditions to maintain junction temperatures within safe limits during continuous operation.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed for general-purpose switching applications. The device is qualified to automotive reliability standards, indicating suitability for demanding environments where high reliability and robust performance are critical requirements.
Single FETs, MOSFETs Replacement Considerations
Consult the official Diodes Incorporated datasheet or authorized distributor databases for verified substitute part numbers. Do not assume functional equivalence with other MOSFETs without confirming pinout, voltage ratings, and thermal characteristics match the original design requirements.
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