DMN2600UFB-7

$0.14

Description：MOSFET N-CH 25V 1.3A 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d4b4afd30858 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2600UFB-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 25V 1.3A 3DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2600UFB-7

Description：MOSFET N-CH 25V 1.3A 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：350mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.85 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：70.13 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：540mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1006-3
Package / Case：3-UFDFN

Single FETs, MOSFETs datasheet and documents for DMN2600UFB-7

DMN2600UFB-7

Single FETs, MOSFETs Overview

The DMN2600UFB-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDSS) of 25V and a continuous drain current (ID) of 1.3A at +25°C, with a pulsed drain current (IDM) rating of 3.0A. The device exhibits low on-resistance (RDS(on)) ranging from 350mΩ to 600mΩ depending on gate drive conditions. It operates within an ambient temperature range of -55°C to +150°C and utilizes the X1-DFN1006-3 surface mount package.

Single FETs, MOSFETs Feature Summary

Compliant with AEC-Q101 standards for high reliability applications
Features an ultra-small X1-DFN1006-3 surface mount package
Includes integrated ESD protection rated at 1kV on the gate terminal

Single FETs, MOSFETs Applications

Battery-powered portable devices
Power management circuits in mobile phones
Low-voltage load switching applications

Single FETs, MOSFETs Procurement Notes

Verify that the specific part number suffix matches the required reel quantity configuration. Confirm compliance requirements such as RoHS and halogen-free status against project specifications. Ensure the ordering information aligns with the intended tape width and reel size parameters provided in the manufacturer documentation.

Single FETs, MOSFETs Selection Notes

Select this component when a compact footprint is required for low-voltage switching tasks. Evaluate the thermal resistance characteristics relative to the available PCB copper area. Consider the low gate threshold voltage for compatibility with logic-level control signals in battery-operated systems.

Single FETs, MOSFETs Part Context

This component belongs to the DMN series of N-channel MOSFETs produced by Diodes Incorporated. It is designed specifically for space-constrained environments requiring efficient power handling in small form factors. The product line emphasizes lead-free manufacturing processes and environmental compliance.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists or equivalent circuit datasheets before implementation. Verify pinout compatibility and ensure electrical ratings meet or exceed original design requirements.