DMN26D0UFB4-7B

Description：DIODE
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:9f2246b33181 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN26D0UFB4-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is DIODE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN26D0UFB4-7B

Description：DIODE
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：3Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：14.1 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

Single FETs, MOSFETs datasheet and documents for DMN26D0UFB4-7B

DMN26D0UFB4-7B

Single FETs, MOSFETs Overview

The DMN26D0UFB4-7B is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN1006-3 surface-mount package. It features a drain-source voltage (VDSS) of 20V and a continuous drain current (ID) of 240mA at TA = +25°C with VGS = 4.5V. The device exhibits a maximum on-resistance (RDS(on)) of 3.0Ω at VGS = 4.5V and 6.0Ω at VGS = 1.8V. Gate-source voltage (VGSS) is rated at ±10V, with a gate threshold voltage (VGS(th)) ranging from 0.6V to 0.9V. Total power dissipation is 350mW at +25°C, and the operating temperature range spans -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Ultra-small surface mount package with a maximum height of 0.4mm
ESD protected gate structure
Totally lead-free and fully RoHS compliant construction

Single FETs, MOSFETs Applications

DC-DC Converters
Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets all applicable environmental compliance standards required for the intended deployment environment before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-state resistance within a compact footprint. Ensure the driving circuit can provide sufficient gate voltage to achieve the specified low RDS(on) values. Verify that the thermal management design accommodates the junction-to-ambient thermal resistance characteristics under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The device is qualified to JEDEC standards for high reliability.

Single FETs, MOSFETs Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, consult the related automotive grade parts with the Q-suffix. Refer to the manufacturer's automotive product listing for verified alternatives meeting IATF 16949 manufacturing requirements.