DMN26D0UT-7

$0.20

Description：MOSFET N-CH 20V 230MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:572f6c14d489 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN26D0UT-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 230MA SOT523. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN26D0UT-7

Description：MOSFET N-CH 20V 230MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
Rds On (Max) @ Id, Vgs：3Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：14.1 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

Single FETs, MOSFETs datasheet and documents for DMN26D0UT-7

DMN26D0UT-7

Single FETs, MOSFETs Overview

The DMN26D0UT-7 is an N-channel enhancement mode MOSFET in a SOT-523 surface-mount package. It features a drain-source voltage of 20V and a continuous drain current of 230mA at 25°C. The device offers low on-resistance, ranging from 1.8Ω to 15.0Ω depending on gate voltage and current conditions. It includes an ESD-protected gate and meets AEC-Q101 standards for high reliability.

Single FETs, MOSFETs Feature Summary

Ultra-small SOT-523 surface mount package
ESD protected gate structure
Qualified to AEC-Q101 automotive standards

Single FETs, MOSFETs Applications

High-efficiency power management applications
Battery-powered portable devices
Low-voltage signal switching

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the -7 suffix for tape and reel packaging. Confirm the specific revision of the datasheet (DS31854 Rev. 2 - 2) matches your design requirements. Ensure compliance with RoHS and halogen-free specifications if required by your manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring minimal footprint and low leakage current. Consider the thermal resistance of 417°C/W when calculating heat dissipation. Verify that the operating voltage does not exceed the 20V drain-source breakdown limit under all transient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel MOSFETs manufactured by Diodes Incorporated. The series focuses on small-signal applications with optimized on-resistance characteristics for low-voltage operation. The DMN26D0UT variant specifically targets ultra-small form factor requirements.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility and electrical ratings against existing components. Verify that any substitute maintains the same SOT-523 package dimensions and thermal characteristics to ensure proper board fit and heat management.