DMN2710UFB-7

$0.04

Description：MOSFET BVDSS: 8V~24V X1-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:d23d9decb13c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMN2710UFB-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V X1-DFN1006-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2710UFB-7

Description：MOSFET BVDSS: 8V~24V X1-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±6V
Input Capacitance (Ciss) (Max) @ Vds：42 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：720mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1006-3
Package / Case：3-UFDFN

Single FETs, MOSFETs datasheet and documents for DMN2710UFB-7

DMN2710UFB-7

Single FETs, MOSFETs Overview

The DMN2710UFB-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X1-DFN1006-3 package. It features a drain-source voltage (VDSS) of 20V and a continuous drain current (ID) of 1.3A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 0.45Ω at VGS = 4.5V and 0.6Ω at VGS = 2.5V. Total gate charge (Qg) is 0.6nC, with a maximum junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Extremely compact footprint of 0.6mm², significantly smaller than standard SOT23 packages
Low gate threshold voltage for efficient drive requirements
Fast switching speed capabilities
Integrated ESD protection on the gate terminal

Single FETs, MOSFETs Applications

Portable electronics power management
High-efficiency battery-powered devices
General-purpose low-voltage switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS, halogen-free, and antimony-free compliance standards as defined by the manufacturer's quality definitions. Ensure the application environment remains within the specified thermal and electrical limits outlined in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when space constraints are critical due to its minimal 0.6mm² footprint. It is suitable for applications requiring fast switching and low gate charge. Consider the 20V rating and 1.3A current capability against load requirements. Verify compatibility with available gate drive voltages given the low threshold characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed for high-efficiency power management. The device is packaged in the X1-DFN1006-3 case, which provides a small form factor suitable for modern surface-mount assembly processes.