DMN2710UFB-7B

$0.03

Description：MOSFET BVDSS: 8V~24V X1-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:5d912fae0fb0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2710UFB-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V X1-DFN1006-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2710UFB-7B

Description：MOSFET BVDSS: 8V~24V X1-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±6V
Input Capacitance (Ciss) (Max) @ Vds：42 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：720mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1006-3
Package / Case：3-UFDFN

Single FETs, MOSFETs datasheet and documents for DMN2710UFB-7B

DMN2710UFB-7B

Single FETs, MOSFETs Overview

The DMN2710UFB-7B is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 20V and a continuous drain current (I_D) of 1.3A at +25°C. The device offers a low on-state resistance (R_DS(ON)) of 0.45Ω maximum at V_GS = 4.5V and 600mA, or 0.6Ω at V_GS = 2.5V and 500mA. It utilizes the X1-DFN1006-3 package with a footprint of 0.6mm². Total gate charge (Q_g) is typically 0.6nC at V_GS = 4.5V and V_DS = 10V.

Single FETs, MOSFETs Feature Summary

Extremely compact X1-DFN1006-3 package providing a footprint of just 0.6mm², which is significantly smaller than standard SOT23 packages.
Optimized for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
Features a low gate threshold voltage and fast switching speed to support efficient drive requirements.
Includes integrated ESD protection on the gate terminal.

Single FETs, MOSFETs Applications

Portable electronics
High-efficiency power management circuits

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix matches the required packaging quantity. The -7B suffix indicates a tape and reel quantity of 10,000 units, whereas the -7 suffix corresponds to 3,000 units. Confirm the exact part number against the datasheet ordering information to ensure correct delivery configuration.

Single FETs, MOSFETs Selection Notes

Select this component when space constraints are critical due to its minimal 0.6mm² footprint. It is suitable for applications requiring a 20V rating and up to 1.3A continuous current. Ensure the driving circuit can provide sufficient gate voltage to achieve the lowest R_DS(ON) values specified in the electrical characteristics table.

Single FETs, MOSFETs Part Context

This device belongs to the DMN2710UFB series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically to minimize on-state resistance while preserving fast switching capabilities. The product line targets modern portable electronics where board real estate is limited.

Single FETs, MOSFETs Replacement Considerations

The DMN2710UFB-7 is a direct substitute differing only in packaging quantity (3,000 units per reel versus 10,000 units). Verify that the application does not require specific automotive qualification standards such as AEC-Q100/101/200, as these require contacting the manufacturer directly.