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DMN2710UT-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT523 T&R. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2710UT-13
- Description：MOSFET BVDSS: 8V~24V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：870mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
- Vgs (Max)：±6V
- Input Capacitance (Ciss) (Max) @ Vds：42 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：320mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
Single FETs, MOSFETs datasheet and documents for DMN2710UT-13
Single FETs, MOSFETs Overview
The DMN2710UT-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 0.87A at +25°C. The device offers low on-resistance, specified as 0.45Ω max at VGS = 4.5V and 0.6Ω max at VGS = 2.5V. Packaged in an ultra-small SOT523 surface-mount case, it supports a junction temperature range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Ultra-small SOT523 surface mount package
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Single FETs, MOSFETs Applications
- DC-DC converters
- Load switch applications
- Power management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards for halogen and antimony-free compliance. Ensure the selected part number matches the exact electrical characteristics and thermal performance requirements for the intended application environment.
Single FETs, MOSFETs Selection Notes
Select this component for high-efficiency power management designs requiring minimal footprint. Evaluate the low input capacitance and fast switching speed for suitable operating frequencies. Consider the thermal resistance and power dissipation limits when designing the PCB layout to ensure reliable operation within the specified temperature range.
Single FETs, MOSFETs Part Context
This N-channel MOSFET belongs to Diodes Incorporated's new generation product line designed to minimize on-state resistance while maintaining superior switching performance. It utilizes silicon technology and is housed in a molded plastic case with a flammability rating of 94V-0. The device is intended for use in compact electronic systems where space constraints are critical.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other Diodes Incorporated N-channel MOSFETs in the SOT523 package. Verify compatibility regarding pinout configuration, maximum voltage ratings, and thermal characteristics before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
