DMN2710UVQ-13

$0.26

Description：MOSFET 2N-CH 20V 0.92A SOT563
Series：-

SKU:5132627ba701 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 0.92A SOT563
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：920mA (Ta)
Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：42pF @ 16V
Power - Max：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：Automotive
Qualification：AEC-Q101

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DMN2710UVQ-13

Overview

The DMN2710UVQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 0.92A at +25°C. The device offers low on-resistance, with RDS(ON) values of 0.45Ω at VGS=4.5V and 0.6Ω at VGS=2.5V. It operates within a temperature range of -55°C to +150°C and is housed in an SOT563 package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Low gate threshold voltage below 1V for efficient drive requirements
Ultra-small surface mount package design for space-constrained layouts
ESD protected gate structure to enhance circuit reliability

Applications

High efficiency power management systems
Automotive electronic modules requiring specific change control
General purpose switching applications

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS45072 Rev. 4-2 to confirm authenticity. Ensure the ordering suffix matches the required packing quantity, as the -13 suffix indicates a 10,000-unit tape and reel carrier. Cross-reference the date code marking BG6YM with manufacturer records to validate production timing and traceability.

Selection Notes

Select this component when a dual N-channel configuration is required in a compact SOT563 footprint. The low gate threshold voltage makes it suitable for logic-level driving scenarios. Verify that the 20V breakdown voltage and 0.92A current rating align with the specific load requirements of the target application circuit.

Part Context

This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The UVQ variant specifically denotes the SOT563 package type and automotive qualification status. It is distinct from single-channel variants or those with different voltage ratings within the broader product family.