DMN2710UVQ-7

$0.26

Description：MOSFET 2N-CH 20V 0.92A SOT563
Series：-

SKU:8571132450ae Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 0.92A SOT563
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：920mA (Ta)
Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：42pF @ 16V
Power - Max：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：Automotive
Qualification：AEC-Q101

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DMN2710UVQ-7

Overview

The DMN2710UVQ-7 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It is qualified to AEC-Q101 standards and manufactured in IATF 16949 certified facilities. The device features a drain-source voltage (BVDSS) of 20V and an on-resistance (RDS(ON)) of 0.45Ω at VGS = 4.5V, supporting a continuous drain current of 0.92A at +25°C. It operates within a junction temperature range of -55°C to +150°C and utilizes a compact SOT563 surface-mount package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Low gate threshold voltage below 1V for efficient drive requirements
Ultra-small SOT563 surface mount package design
ESD protected gate structure

Applications

High efficiency power management systems
Automotive electronic circuits requiring specific change control
General purpose switching applications

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS45072 Rev. 4-2 to confirm authenticity and specifications. Ensure that the ordering suffix matches the required packing quantity, such as the -7 suffix for tape and reel packaging containing 3,000 units per carrier. Cross-reference all electrical parameters with the manufacturer's documentation prior to integration.

Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint. The low gate threshold voltage facilitates compatibility with standard logic levels. Verify thermal performance against the specified junction-to-ambient resistance values for the intended PCB copper area and mounting conditions to ensure reliable operation under load.

Part Context

This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the SOT563 package form factor with other devices in the lineup but offers distinct electrical characteristics tailored for automotive-grade reliability and high-efficiency power management applications.