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DMN2710UW-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT323 T&R. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2710UW-13
- Description：MOSFET BVDSS: 8V~24V SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
- Vgs (Max)：±6V
- Input Capacitance (Ciss) (Max) @ Vds：42 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：470mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
Single FETs, MOSFETs datasheet and documents for DMN2710UW-13
Single FETs, MOSFETs Overview
The DMN2710UW-13 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±6V. The device offers a typical static drain-source on-resistance (RDS(ON)) of 0.45Ω at VGS = 4.5V and ID = 600mA, or 0.6Ω at VGS = 2.5V and ID = 500mA. Continuous drain current reaches 0.9A at TA = +25°C. Packaged in an SOT323 case, it includes total gate charge (Qg) of 0.6nC and input capacitance (Ciss) of 42pF.
Single FETs, MOSFETs Feature Summary
- Low on-state resistance for high efficiency power management
- Low input capacitance supporting fast switching speed
- Totally lead-free and fully RoHS compliant construction
Single FETs, MOSFETs Applications
- General purpose interfacing switch
- Power management functions
- DC-DC converters
- Analog switch
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically the halogen and antimony-free 'Green' device definition. Ensure the selected package type matches the SOT323 footprint requirements for the target PCB layout design.
Single FETs, MOSFETs Selection Notes
Select this component when a low-voltage N-channel MOSFET with minimal on-resistance is required for compact designs. The SOT323 package provides a small form factor suitable for space-constrained applications. Evaluate the thermal performance against the junction-to-ambient resistance specifications to ensure adequate heat dissipation under steady-state operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the DMN2710UW series of 20V N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management applications requiring compact surface-mount solutions.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before implementation.
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