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DMN2710UWQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT323 T&R. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2710UWQ-13
- Description：MOSFET BVDSS: 8V~24V SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
- Vgs (Max)：±6V
- Input Capacitance (Ciss) (Max) @ Vds：42 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：470mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
Single FETs, MOSFETs datasheet and documents for DMN2710UWQ-13
Single FETs, MOSFETs Overview
The DMN2710UWQ-13 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT323 package. It features a maximum drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 0.9A at +25°C. The device offers low on-state resistance, specified as 0.45Ω max at VGS=4.5V and 0.6Ω max at VGS=2.5V. It is AEC-Q101 qualified for automotive applications.
Single FETs, MOSFETs Feature Summary
- Low on-resistance design for high efficiency power management
- Fast switching speed with low input capacitance
- Suitable for automotive applications requiring specific change control
- Totally lead-free and fully RoHS compliant
Single FETs, MOSFETs Applications
- General purpose interfacing switch
- Power management functions
- DC-DC converters
- Analog switch
Single FETs, MOSFETs Procurement Notes
Verify the component datasheet revision and date code markings against the manufacturer's official documentation to ensure authenticity. Confirm that the SOT323 package dimensions and pinout match your PCB footprint requirements. Check for any specific automotive qualification certifications if the application requires IATF 16949 compliance.
Single FETs, MOSFETs Selection Notes
Select this component when a compact N-channel MOSFET with low RDS(ON) is required for 20V logic-level switching applications. Consider the thermal resistance characteristics and operating temperature range (-55°C to +150°C) for your specific environment. Ensure the gate drive voltage aligns with the specified thresholds for optimal performance.
Single FETs, MOSFETs Part Context
This part belongs to Diodes Incorporated's line of small signal field-effect transistors designed for surface-mount applications. The DMN2710UWQ series focuses on minimizing on-state resistance while maintaining fast switching capabilities, making it suitable for portable electronics and battery-powered devices where space and efficiency are critical constraints.
Single FETs, MOSFETs Replacement Considerations
Consult the manufacturer's official substitution guide for verified alternatives. Cross-reference parameters such as BVDSS, ID, RDS(ON), and package type to ensure compatibility.
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