DMN2990UDJ-7

DMN2990UDJ-7

$0.47
  • Description:MOSFET 2N-CH 20V 0.45A SOT963
  • Series:-

SKU:1c4c756ae2a5 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 0.45A SOT963
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:450mA
  • Rds On (Max) @ Id, Vgs:990mOhm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:27.6pF @ 16V
  • Power - Max:350mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-963
  • Supplier Device Package:SOT-963
  • Grade:-
  • Qualification:-

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DMN2990UDJ-7

Overview

The DMN2990UDJ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 450 mA at TA = +25°C. The device exhibits a typical static drain-source on-resistance (RDS(ON)) of 0.60 Ω at VGS = 4.5 V, with a maximum gate threshold voltage (VGS(TH)) of 1.0 V. Total gate charge (Qg) is typically 0.5 nC. Operating temperatures range from -55°C to +150°C, with a total power dissipation of 350 mW. The component is housed in an ultra-small SOT963 surface-mount package.

Feature Summary

  • Dual N-channel configuration within an ultra-small 1mm x 1mm SOT963 package
  • Low on-resistance optimized for high efficiency power management applications
  • Very low gate threshold voltage enabling fast switching speeds
  • ESD protected gate structure with fully lead-free and RoHS compliant construction

Applications

  • General purpose interfacing switch
  • Power management functions
  • DC-DC converters
  • Analog switch

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The suffix '7' indicates standard packaging without a pin 1 indicator marking. Confirm that the required quantity aligns with the manufacturer's standard tape and reel specifications. Ensure compliance with applicable environmental directives such as RoHS and REACH requirements prior to finalizing purchase orders.

Selection Notes

Select this component when space constraints require an ultra-small surface mount package. Verify that the 20 V drain-source voltage rating meets the circuit requirements. Evaluate the RDS(ON) values at the intended gate drive voltages to ensure adequate current handling capabilities. Consider the thermal resistance characteristics if operating near the maximum junction temperature limits.

Part Context

This part belongs to the DMN2990 series of dual N-channel enhancement mode MOSFETs. It shares similar electrical characteristics with other members of the family but differs in physical packaging and specific parameter tolerances. The DMN2990UDJ variant utilizes the SOT963 case outline, distinguishing it from other package options available within the broader product line.

Replacement Considerations

The DMN2990UDJ-7A serves as a direct replacement option, differing only in the presence of a Pin 1 indicator marking on the device surface. No functional or electrical differences exist between these two variants. Verify mechanical footprint compatibility when substituting with components from other manufacturers.

DMN2990UDJ-7DMN2990UDJ-7
$0.47
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