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Product Detailed Parameters
- Description：MOSFET 2N-CH 0.45A SOT963
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：450mA (Ta)
- Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：27.6pF @ 16V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-963
- Supplier Device Package：SOT-963
- Grade：-
- Qualification：-
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Overview
The DMN2990UDJQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±8V. The device provides a continuous drain current (ID) of 450mA at VGS = 4.5V, with a maximum static drain-source on-resistance (RDS(ON)) of 0.99Ω under the same condition. Total power dissipation (PD) is rated at 350mW, and the junction-to-ambient thermal resistance (RθJA) is 360°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in an ultra-small SOT963 surface mount package
- Low on-resistance optimized for high efficiency power management applications
- Very low gate threshold voltage enabling operation at reduced drive voltages
- ESD protected gate structure with fast switching speed characteristics
Applications
- General purpose interfacing switch
- Power management functions
- DC-DC converters
- Analog switch
Procurement Notes
Verify the component against the official datasheet DS39441 Rev. 1-2 to confirm authenticity. Ensure the ordering suffix matches the specified tape and reel packaging format. Confirm that the received parts meet AEC-Q101 qualification standards if automotive reliability requirements are necessary for the specific application design.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage signal or power switching. Evaluate the RDS(ON) specifications across various gate drive voltages to ensure adequate conduction performance. Consider the thermal resistance and power dissipation limits relative to the expected load current and ambient operating conditions.
Part Context
This part belongs to the DMN2990 series of dual N-channel MOSFETs produced by Diodes Incorporated. It utilizes the SOT963 case style, which measures approximately 1mm x 1mm with a maximum height of 0.45mm. The series is designed to minimize on-state resistance while maintaining superior switching performance for portable and space-constrained electronics.
Replacement Considerations
Direct replacements include the DMC2990UDJQ-7, which offers a complementary N/P-channel configuration within the same SOT963 package footprint. Verify pinout compatibility and electrical parameter alignment before substituting.
