DMN2990UFA-7B

$0.49

Description：MOSFET N-CH 20V 510MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ba7c385cafe6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2990UFA-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 510MA 3DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2990UFA-7B

Description：MOSFET N-CH 20V 510MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：510mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：27.6 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN0806-3
Package / Case：3-XFDFN

Single FETs, MOSFETs datasheet and documents for DMN2990UFA-7B

DMN2990UFA-7B

Single FETs, MOSFETs Overview

The DMN2990UFA-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 20 V and a continuous drain current (ID) of 510 mA at +25°C. The device exhibits a maximum static drain-source on-resistance (RDS(ON)) of 0.99 Ω at VGS = 4.5 V, with lower resistance values available at higher gate voltages. Total gate charge (Qg) is typically 0.5 nC at VGS = 4.5 V. Thermal characteristics include a steady-state power dissipation (PD) of 400 mW and a junction-to-ambient thermal resistance (RθJA) of 310 °C/W. Operating and storage temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Features a low package profile with a maximum height of 0.4 mm and a footprint 16 times smaller than SOT23.
Includes an ESD protected gate structure for enhanced reliability.
Qualified to AEC-Q101 standards for high reliability automotive applications.

Single FETs, MOSFETs Applications

General purpose interfacing switch
Power management functions
Analog switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7B' against official Diodes Incorporated documentation to confirm packaging details, as suffixes can indicate variations in reel size or tape specifications. Ensure compliance requirements such as RoHS and halogen-free status are validated against the latest datasheet revision DS35765 Rev. 3-2 before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution is required for low-voltage switching applications. The X2-DFN0806-3 package offers significant space savings compared to traditional packages like SOT23. Consider the RDS(ON) performance at your specific operating gate voltage, as resistance varies significantly between 1.5 V and 4.5 V drive levels.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2990 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on providing low on-resistance within extremely small form factors suitable for portable electronics and dense circuit board layouts.

Single FETs, MOSFETs Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified alternatives. Do not assume functional equivalence based solely on matching electrical parameters without verifying pinout compatibility and package dimensions.