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Product Detailed Parameters
- Description：MOSFET N-CH 20V 750MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.41 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：31 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：840mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN0604-3
- Package / Case：3-XFDFN
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Overview
The DMN2990UFO-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 20 V and an ultra-low on-resistance (R_DS(ON)) ranging from 0.5 Ω to 2.4 Ω depending on the gate-source voltage (V_GS). The device supports a continuous drain current (I_D) up to 750 mA at +25°C. Packaged in a compact X2-DFN0604-3 footprint, it offers a low profile suitable for space-constrained designs.
Feature Summary
- Ultra-low package profile with a 0.6mm x 0.4mm footprint
- Low on-state resistance optimized for high efficiency power management
- Very low gate threshold voltage allowing operation at reduced drive voltages
- ESD protected gate structure for enhanced reliability
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch applications
Procurement Notes
Verify the specific ordering suffix '-7B' against official manufacturer documentation to confirm packaging details, as suffixes can indicate variations in reel specifications or tape-and-reel configurations. Ensure compliance with RoHS and halogen-free requirements if specified for your application. Cross-reference the datasheet revision number to guarantee access to the most current electrical characteristics and mechanical dimensions.
Selection Notes
Select this component when designing circuits requiring a small form factor and efficient switching at low voltages. The low gate threshold voltage makes it suitable for logic-level control interfaces. Evaluate the thermal performance based on the specific PCB copper area and ambient temperature conditions, as the small package size limits total power dissipation capabilities compared to larger packages.
Part Context
This part belongs to the DMN2990 series of N-channel MOSFETs designed by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The 'UFO' designation typically refers to the specific package type and pin configuration within the product family, distinguishing it from other variants like the DMN2990UFZ.
Replacement Considerations
Check for alternative part numbers within the same DMN2990 series that may offer different packaging options or slight parameter variations. Verify that any substitute maintains the required 20V breakdown voltage and compatible R_DS(ON) values. Ensure the replacement package matches the X2-DFN0604-3 footprint to avoid PCB layout modifications.
