DMN2991UDR4-7

Overview

The DMN2991UDR4-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±8V. The device provides a typical static drain-source on-resistance (RDS(ON)) of 0.99Ω at VGS = 4.5V with a continuous drain current (ID) of 0.5A. At VGS = 2.5V, RDS(ON) is typically 1.2Ω with an ID of 0.4A. Total power dissipation is rated at 0.38W in steady state on FR-4 substrate. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration designed for high-efficiency power-management applications
• Low on-state resistance combined with fast switching performance
• ESD protected gate structure
• Totally lead-free and fully RoHS compliant

Applications

• Power-management functions
• Backlighting circuits
• Load switches

Procurement Notes

Verify the specific ordering suffix when purchasing. The DMN2991UDR4-7 variant comes in a 5000-unit tape and reel carrier. Confirm that the component meets all applicable regulatory standards required for your specific deployment environment before finalizing orders.

Selection Notes

Select this component for low-voltage applications requiring dual channel integration within a compact X2-DFN1010-6 package. Ensure the design accommodates the thermal resistance characteristics, as steady-state power dissipation is limited to 0.38W on standard FR-4 substrates without additional copper plating.

Part Context

This part belongs to the DMN2991 series of dual N-channel MOSFETs. It utilizes the X2-DFN1010-6 (Type UXC) surface-mount package. The device is intended for general consumer electronics and portable devices where space constraints and efficiency are critical design factors.

Replacement Considerations

Direct substitutes include other dual N-channel MOSFETs with similar 20V ratings and comparable RDS(ON) values in the X2-DFN1010-6 package. Verify pinout compatibility and thermal performance metrics before swapping components in existing designs.

FAQ

What is the maximum pulsed drain current for the DMN2991UDR4?

The maximum pulsed drain current (IDM) is 1.4A, specified under conditions of a 10µs pulse duration and a 1% duty cycle.

How does the on-resistance vary with junction temperature?

The on-resistance increases as the junction temperature rises. Graphical data indicates positive temperature coefficient behavior across the operating range of -55°C to +150°C.

Is the internal body diode characterized?

Yes, the forward voltage (VSD) is specified as typically 0.8V at a source current of 150mA with the gate shorted to the source.