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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.5A 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：14.6pF @ 16V
- Power - Max：380mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFDFN Exposed Pad
- Supplier Device Package：X2-DFN1010-6 (Type UXC)
- Grade：-
- Qualification：-
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Overview
The DMN2991UDR4-7R is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and operates within a junction temperature range of -55°C to +150°C. The device provides a typical static drain-source on-resistance (RDS(ON)) of 0.99Ω at VGS = 4.5V with an ID of 100mA, and 1.2Ω at VGS = 2.5V with an ID of 50mA. Continuous drain current reaches 0.5A at TA = +25°C. Packaged in an X2-DFN1010-6 surface-mount format, it includes ESD protection for the gate terminal.
Feature Summary
- Dual configuration integrating two independent N-channel enhancement mode MOSFETs into a single compact package.
- Optimized low on-state resistance combined with fast switching speed for high-efficiency power management applications.
- Integrated electrostatic discharge (ESD) protection on the gate terminal to enhance circuit reliability.
Applications
- Power-management functions
- Backlighting circuits
- Load switches
Procurement Notes
Verify the specific ordering suffix '-7R' against official Diodes Incorporated documentation to confirm tape and reel packaging specifications. Ensure that the X2-DFN1010-6 package dimensions align with your PCB footprint requirements. Confirm compliance with RoHS directives and lead-free manufacturing standards prior to procurement.
Selection Notes
Select this component when a dual N-channel configuration is required within a minimal footprint. Evaluate the RDS(ON) values at relevant gate drive voltages (e.g., 1.5V to 4.5V) to ensure compatibility with system logic levels. Consider the thermal resistance characteristics and power dissipation limits under expected operating conditions.
Part Context
This part belongs to the DMN2991UDR4 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares core electrical characteristics with other variants in the family but differs in packaging and shipping configurations. The 'UDR4' designation indicates the specific die and package type used in this product line.
Replacement Considerations
Consult official Diodes Incorporated substitution guides or contact technical support for verified alternative part numbers. Do not assume functional equivalence based solely on pinout or voltage ratings without reviewing detailed electrical parameter comparisons.
FAQ
What is the maximum continuous drain current for the DMN2991UDR4?
The maximum continuous drain current is 0.5A at a case temperature of +25°C and reduces to 0.4A at +100°C.
Does the DMN2991UDR4 include internal ESD protection?
Yes, the datasheet specifies that the gate terminal is ESD protected.
What is the package type for the DMN2991UDR4-7R?
The device is housed in an X2-DFN1010-6 (Type UXC) surface-mount package.
