DMN2991UFA-7B

$0.03

Description：MOSFET BVDSS: 8V~24V X2-DFN0806-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:314984b9693c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V X2-DFN0806-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：520mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：280 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：14.6 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：420mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN0806-3
Package / Case：3-XFDFN

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DMN2991UFA-7B

Overview

The DMN2991UFA-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 20 V and a continuous drain current (I_D) of 0.52 A at +25°C. The device offers a low on-state resistance (R_DS(ON)) of 0.99 Ω max at V_GS = 4.5 V, with a gate threshold voltage (V_GS(th)) of 1.0 V max. Total gate charge (Q_g) is 0.28 nC typical. It operates within a temperature range of -55°C to +150°C and utilizes an X2-DFN0806-3 package.

Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance.
Features a very low gate threshold voltage of 1.0 V maximum.
Includes ESD protection for the gate terminal.
Compliant with RoHS directives and halogen/antimony-free standards.

Applications

General purpose interfacing switches
Power management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-7B' against official documentation to confirm packing quantity and carrier type. Ensure the component meets required environmental compliance standards such as RoHS and lead-free specifications before procurement. Confirm that the X2-DFN0806-3 package dimensions align with the target PCB layout constraints.

Selection Notes

Select this component for circuits requiring low voltage operation and compact footprint. The low gate threshold voltage supports logic-level driving. Evaluate thermal performance based on the specified junction-to-ambient thermal resistance. Consider the maximum power dissipation limits when designing for steady-state or pulsed operations.

Part Context

This part belongs to the DMN2991 series of N-channel MOSFETs from Diodes Incorporated. It is designed to balance low on-resistance with superior switching performance. The device is intended for general-purpose switching and power management tasks where space efficiency is critical due to its small package profile.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-reference pin configurations and electrical parameters carefully. Verify package compatibility and thermal characteristics before implementing any substitute components in existing designs.